Memory with TSV health monitor circuitry

US11393790B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Dale H. Hiscock · Boise, US
• Evan C. Pearson · Boise, US
• John H. Gentry · Boise, US
• Michael J. Scott · Germantown, US
• Greg S. Gatlin · Mountain Home, US
• Lael H. Matthews · Meridian, US
• Anthony M. Geidl · Boise, US
• Michael Roth · Boise, US
• Markus H. Geiger · Boise, US

Key dates

• Filing date: Dec 6, 2019
• Grant date: Jul 19, 2022
• Expiry date: Feb 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/15311
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Memory devices and systems with TSV health monitor circuitry, and associated methods, are disclosed herein. In one embodiment, a memory device includes a plurality of memory dies, a plurality of through-silicon vias (TSVs) in electrical communication with the memory dies; and circuitry. In some embodiments, the circuitry is configured to electrically couple a pair of TSVs of the plurality of TSVs to form a passive circuit. For example, the circuitry can activate a transistor electrically positioned between TSVs of the pair of TSVs to electrically couple the pair of TSVs. In these and other embodiments, the circuitry applies a test voltage to the pair of TSVs using the passive circuit to determine whether a TSV of the pair of TSVs includes degradation.