Image sensor
US11393864B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2020 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Mar 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/08145
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image sensor is provided. The image sensor includes a first substrate; a plurality of photoelectric conversion units positioned in the first substrate; a first connection layer disposed on the first substrate; a plurality of first pixel pads disposed on the first connection layer; a plurality of first peripheral pads disposed on the first substrate; a plurality of second pixel pads respectively positioned on the plurality of first pixel pads; a plurality of second peripheral pads respectively positioned on the plurality of first peripheral pads; a second connection layer disposed on the plurality of second pixel pads and the plurality of second peripheral pads; a device disposed on the second connection layer; and a second substrate disposed on the second connection layer and the device, wherein a pitch of the plurality of first pixel pads is substantially the same as a pitch of the plurality of pixel regions of the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.