Three dimensional resistive random access memory and method enabling such a memory to be obtained
US11393876B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2018 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Apr 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three dimensional memory includes flat electrodes, each defining a plane; a vertical electrode, extending essentially along an axis perpendicular to the plane defined by each flat electrode; floating electrodes, each situated between a flat electrode and the vertical electrode; first layers of an insulating material, each flat electrode being separated from the preceding and/or following flat electrode by a first layer of an insulating material; first layers of a first active material, each layer of an active material separating a flat electrode from the floating electrode that is associated therewith; a second layer of a second active material separating the vertical electrode from the floating electrodes. The first active material forms a selector or a memory point and the second active material forms a memory point or a selector. Each flat electrode includes first, second and third sub-layers made of, respectively, first, second and third conductive materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.