High-voltage semiconductor device with increased breakdown voltage
US11393899B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 14, 2019 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Aug 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/762
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High voltage semiconductor device and manufacturing method thereof are disclosed. The high voltage semiconductor device includes a semiconductor substrate, a gate structure, at least one first isolation structure and at least one second isolation structure, and at least one first drift region. The gate structure is disposed on the semiconductor substrate. The first isolation structure and the second isolation structure are disposed in an active area of the semiconductor substrate at a side of the gate structure. An end of the second isolation structure is disposed between the first isolation structure and the gate structure, and an end of the first isolation structure is disposed between the first doped region and the second isolation structure. A bottom of the at least one first isolation structure and a bottom of the at least one second isolation structure are deeper than a bottom of the first drift region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.