Semiconductor device
US11393902B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2018 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Jan 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/0603
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate comprising an upper surface and a lower surface, an upper electrode provided on the upper surface, and a lower electrode provided on the lower surface. The semiconductor substrate includes, in a planar view, a first section including a center of the semiconductor substrate and a second section located between the first section and a peripheral edge of the semiconductor substrate. The first and second sections each comprise a MOSFET structure including a body diode. The MOSFET structure in the first section and the MOSFET structure in the second section are different from each other such that a forward voltage drop of the body diode in the first section with respect to a current density is higher than a forward voltage drop of the body diode in the second section with respect to the current density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.