Patent · US Active

Chemical mechanical polishing pad

US11396081B2 · kind B2 · utility

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5Claims

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Assignee

Rohm and Haas Electronic Materials CMP Holdings, Inc. · US

Inventors

Bainian Qian · Newark, US
Marty W. DeGroot · Middletown, US

Key dates

Filing date	May 17, 2019
Grant date	Jul 26, 2022
Priority date	—
Expiry date	May 17, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31053
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.