Conductive contact for ion through-substrate via
US11398516B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2019 |
| Grant date | Jul 26, 2022 |
| Priority date | — |
| Expiry date | Dec 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/08145
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present disclosure are directed towards an integrated chip including a first through substrate via (TSV) disposed within a semiconductor substrate. The semiconductor substrate has a front-side surface and a back-side surface respectively on opposite sides of the semiconductor substrate. The semiconductor substrate comprises a first doped channel region extending from the front-side surface to the back-side surface. The first TSV is defined at least by the first doped channel region. A conductive contact overlies the back-side surface of the semiconductor substrate and comprises a first conductive layer overlying the first TSV. The first conductive layer comprises a conductive material. An upper conductive layer underlies the conductive contact. An upper surface of the upper conductive layer is aligned with the back-side surface of the semiconductor substrate. The upper conductive layer comprises a silicide of the conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.