Method for producing optoelectronic devices comprising light-emitting diodes
US11398579B2 · kind B2 · utility
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Key dates
| Filing date | Jun 19, 2018 |
| Grant date | Jul 26, 2022 |
| Priority date | — |
| Expiry date | Jul 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.