Patent · US Active

Wafer level method for manufacturing integrated infrared (IR) emitter elements having an optical IR filter placed on the main surface region of the carrier substrate on which the IR emitter is formed

US11402556B2 · kind B2 · utility

0Cited by

0References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stephan Pindl · Ergoldsbach, DE
Matthias Steiert · Rosenheim, DE

Key dates

Filing date	Feb 3, 2020
Grant date	Aug 2, 2022
Priority date	—
Expiry date	Oct 9, 2040

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2203/0118
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method for manufacturing integrated IR (IR=infrared) emitter elements having an optical filter comprises back side etching through a carrier substrate, forming adhesive spacer elements on a conductive layer on the carrier substrate, placing a filter substrate having a filter carrier substrate and a filter layer on the adhesive spacer elements, fixing the adhesive spacer elements to the carrier substrate and the filter substrate by curing, pre-dicing through the filter substrate for exposing the contact pads of the structured conductive layer, and dicing through the frame structure in the carrier substrate for separating the integrated IR emitter elements having the optical filter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.