Self adapting iterative read calibration to retrieve data from memory cells
US11403042B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2021 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Jun 17, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5632
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory sub-system configured to iterative calibrate read voltages, where higher read voltages are calibrated based on the calibration results of lower read voltages. For example, a memory device initially determines first read voltages of a group of memory cells. The memory device calculates a second read voltage optimized to read the group of memory cells according to first signal and noise characteristics measured based on at least one of the first read voltages. A third read voltage is estimated based on an offset of the second read voltage from a corresponding voltage among the first read voltages. Second signal and noise characteristics of the group of memory cells are measured based on the third read voltage. The memory device then calculates a fourth read voltage optimized to read the group of memory cells according to the second signal and noise characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.