Magnetoresistive memory device including a magnesium containing dust layer
US11404193B2 · kind B2 · utility
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10References
21Claims
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Key dates
| Filing date | Mar 24, 2021 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Mar 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Magnetoelectric or magnetoresistive memory cells include a magnesium containing nonmagnetic metal dust layer located between a free layer and a dielectric capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.