Plasma etcher edge ring with a chamfer geometry and impedance design
US11404250B2 · kind B2 · utility
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1References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Jul 8, 2020 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Jul 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An edge ring, for a plasma etcher, may include a circular bottom portion with an opening sized to receive an electrostatic chuck supporting a semiconductor device, and a circular top portion integrally connected to a first top part of the circular bottom portion. The edge ring may include a circular chamfer portion integrally connected to a second top part of the circular bottom portion and integrally connected to a side of the circular top portion. The circular chamfer portion may include an inner surface that is angled radially outward from the opening at less than ninety degrees.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.