Microelectronic device substrate formed by additive process
US11404270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2018 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Nov 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/016
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device is formed by forming at least a portion of a substrate of the microelectronic device by one or more additive processes. The additive processes may be used to form semiconductor material of the substrate. The additive processes may also be used to form dielectric material structures or electrically conductive structures, such as metal structures, of the substrate. The additive processes are used to form structures of the substrate which would be costly or impractical to form using planar processes. In one aspect, the substrate may include multiple doped semiconductor elements, such as wells or buried layers, having different average doping densities, or depths below a component surface of the substrate. In another aspect, the substrate may include dielectric isolation structures with semiconductor material extending at least partway over and under the dielectric isolation structures. Other structures of the substrate are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.