Contact plug with impurity variation
US11404312B2 · kind B2 · utility
5Cited by
11References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2020 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Dec 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming an opening in a dielectric layer, depositing a seed layer in the opening, wherein first portions of the seed layer have a first concentration of impurities, exposing the first portions of the seed layer to a plasma, wherein after exposure to the plasma the first portions have a second concentration of impurities that is less than the first concentration of impurities, and filling the opening with a conductive material to form a conductive feature. In an embodiment, the seed layer includes tungsten, and the conductive material includes tungsten. In an embodiment, the impurities include boron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.