Semiconductor device structure with resistive element
US11404369B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2019 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | May 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a gate stack, and an interconnect structure over the gate stack and the semiconductor substrate. The semiconductor device structure also includes a resistive element over the interconnect structure, and the resistive element is directly above the gate stack. The semiconductor device structure further includes a thermal conductive element over the interconnect structure. The thermal conductive element at least partially overlaps the resistive element. In addition, the semiconductor device structure includes a dielectric layer separating the thermal conductive element from the resistive element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.