Memory device and fabrication method thereof

US11404438B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Kai Han · Zhubeikou, TW
• Yali Guo · Beijing, CN
• Zhipeng Wu · 红钢城街道, CN
• Lu Zhang · Shanghai, CN
• Hang Yin · Beijing, CN
• Simin Liu · 红钢城街道, CN
• Bo Xu · Beijing, CN

Key dates

• Filing date: Sep 4, 2020
• Grant date: Aug 2, 2022
• Expiry date: Jan 23, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115

Abstract

A memory device includes a substrate; and a stack structure, including alternately arranged first dielectric layers and electrode layers. In a first lateral direction, the memory device includes array regions and a staircase region arranged between array regions. In a second lateral direction, the stack structure includes a first block and a second block, each including a wall-structure region and extending along the first lateral direction. The wall-structure regions of the first block and the second block are adjacent to each other and together form a wall structure in the staircase region. The memory device also includes a first separation structure, formed through the stack structure and positioned between the first block and the second block in array regions along the first lateral direction; and second dielectric layers positioned between the first block and the second block in the staircase region, and alternated with the first dielectric layers.