Method of forming a high electron mobility transistor
US11404557B2 · kind B2 · utility
2Cited by
10References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 10, 2020 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Sep 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a high electron mobility transistor (HEMT) includes a first III-V compound layer and a second III-V compound layer disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are disposed on the second III-V compound layer. A p-type layer is disposed on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is disposed on the p-type layer. A capping layer is disposed on the second III-V compound layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.