Device and method for measuring thermal load caused by excited state absorption in laser gain crystal
US11404840B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2020 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Jan 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/109
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A device and a method for measuring thermal load caused by excited state absorption in laser gain crystal are disclosed. Thermal focal lengths on the tangential and sagittal planes of the laser gain crystal are obtained by obtaining the threshold when the pump power is decreased, the optimal operating point, and cavity parameters of the single-frequency laser. Individual ABCD matrices of the laser gain crystal on the tangential plane and the sagittal plane are obtained based on thermal focal length. The thermal load corresponding to the threshold when the pump power is decreased, the ESA thermal load corresponding to the threshold when the pump power is decreased, and the ESA thermal load at the optimal operating point are obtained
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.