Bonding pad layer system, gas sensor and method for manufacturing a gas sensor

US11407635B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Andreas Scheurle · Leonberg, DE
• Bernd Klein · Gerolzhofen, DE
• Heinz Nedelmann · Rötteln, DE
• Heribert Weber · Leverkusen, DE
• Isolde Simon · Aspenhausiedlung, DE
• Martin Lapisa · Metzingen, DE
• Melissa Delheusy · Bonlanden, DE
• Michael Knauss · Pfullingen, DE
• Raschid Baraki · Reutlingen, DE
• Vitaliy Kondrashov · Reutlingen, DE

Key dates

• Filing date: Jun 14, 2018
• Grant date: Aug 9, 2022
• Expiry date: Aug 26, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/1461
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area.