Methods for growing a single crystal silicon ingot using continuous Czochralski method
US11408090B2 · kind B2 · utility
1Cited by
16References
25Claims
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Key dates
| Filing date | Apr 14, 2020 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | May 22, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.