Non-orthogonal target and method for using the same in measuring misregistration of semiconductor devices

US11409205B2 · kind B2 · utility

Assignee

• KLA Corporation · US

Inventors

• Itay Gdor · Elyachin, IL
• Yuval Lubashevsky · Haifa, IL
• Yuri Paskover · Or Akiva, IL
• Yoram Uziel · Yodfat, IL
• Nadav Gutman · Zichron Ya'akov, IL

Key dates

• Filing date: Jun 25, 2020
• Grant date: Aug 9, 2022
• Expiry date: Jul 23, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2223/54426
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A target for use in the measurement of misregistration between layers formed on a wafer in the manufacture of semiconductor devices, the target including a first pair of periodic structures (FPPS) and a second pair of periodic structures (SPPS), each of the FPPS and the SPPS including a first edge, a second edge, a plurality of first periodic structures formed in a first area as part of a first layer and having a first pitch along a first pitch axis, the first pitch axis not being parallel to either of the first edge or second edge, and a plurality of second periodic structures formed in a second area as part of a second layer and having the first pitch along a second pitch axis, the second pitch axis being generally parallel to the first pitch axis.