Patent · US Active

Integrated circuit devices with front-end metal structures

US11410908B2 · kind B2 · utility

0Cited by

1References

22Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Reinhard Mahnkopf · Oberhaching, DE
Sonja Koller · Regensburg, DE
Andreas Wolter · Regensburg, DE

Key dates

Filing date	Jun 26, 2018
Grant date	Aug 9, 2022
Priority date	—
Expiry date	Dec 9, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/15311
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Present disclosure relates to IC devices with thermal mitigation structures in the form of metal structures provided in a semiconductor material of a substrate on which active electronic devices are integrated (i.e., front-end metal structures). In one aspect, an IC device includes a substrate having a first face and a second face, where at least one active electronic device is integrated at the first face of the substrate. The IC device further includes at least one front-end metal structure that extends from the first face of the substrate into the substrate to a depth that is smaller than a distance between the first face and the second face. Providing front-end metal structures may enable improved cooling options because such structures may be placed in closer vicinity to the active electronic devices, compared to conventional thermal mitigation approaches.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.