Image sensor device and manufacturing method thereof
US11411033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2020 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Oct 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method includes forming a first photoresist layer on a front side of a device substrate and having first trenches spaced apart from each other. A first implantation process is performed using the first photoresist layer as a mask to form first isolation regions in the device substrate. A second photoresist layer is formed on the front side and has second trenches. A second implantation process is performed using the second photoresist layer as a mask to form second isolation regions in the device substrate and crossing over the first isolation regions. A third photoresist layer is formed on the front side and has third trenches spaced apart from each other. A third implantation process is performed using the third photoresist layer as a mask to form third isolation regions in the device substrate and crossing over the first isolation regions but spaced apart from the second isolation regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.