Semiconductor device, inverter circuit, drive device, vehicle, and elevator
US11411084B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2021 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Mar 4, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T10/70
- WIPO fieldTransport
- WIPO sectorMechanical engineering
Abstract
A semiconductor device of an embodiment includes a first trench extending in a first direction in a silicon carbide layer; a second trench and a third trench adjacent to each other in the first direction; a first silicon carbide region of n type; a second silicon carbide region of p type on the first silicon carbide region; a third silicon carbide region of n type on the second silicon carbide region; a fourth silicon carbide region of p type between the first silicon carbide region and the second trench; a fifth silicon carbide region of p type between the first silicon carbide region and the third trench; a gate electrode in the first trench; a first electrode, part of which is in the second trench, the first electrode contacting the first silicon carbide region between the fourth silicon carbide region and the fifth silicon carbide region; and a second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.