Methods of forming group III piezoelectric thin films via sputtering
US11411168B2 · kind B2 · utility
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Key dates
| Filing date | Jul 16, 2019 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Feb 15, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49005
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.