Perpendicular spin transfer torque devices with improved retention and thermal stability

US11411173B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Angeline Smith · Hillsboro, US
• Justin S. Brockman · Portland, US
• Tofizur Rahman · Portland, US
• Daniel G. Ouellette · Portland, US
• Andrew L. Smith · Needham, US
• Juan Alzate Vinasco · Tigard, US
• James ODonnell · Forest Grove, US
• Christopher J. Wiegand · Portland, US
• Oleg Golonzka · Beaverton, US

Key dates

• Filing date: Jun 15, 2018
• Grant date: Aug 9, 2022
• Expiry date: Dec 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

Material stacks for perpendicular spin transfer torque memory (pSTTM) devices, pSTTM devices and computing platforms employing such material stacks, and methods for forming them are discussed. The material stacks include a cladding layer of predominantly tungsten on a protective layer, which is in turn on an oxide capping layer over a magnetic junction stack. The cladding layer reduces oxygen dissociation from the oxide capping layer for improved thermal stability and retention.