Patent · US Active

Edge-emitting laser bar

US11411375B2 · kind B2 · utility

1Cited by
8References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 21, 2018
Grant dateAug 9, 2022
Priority date
Expiry dateMar 18, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.