Semiconductor device having an extra low-k dielectric layer and method of forming the same
US11417602B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2020 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Jul 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesion layer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer. A protection layer is formed over the ELK dielectric layer. A hard mask is formed over the protection layer and is patterned to create a window. Layers underneath the window are removed to create an opening. The removed layers include the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer. A metal layer is formed in the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.