Patent · US Active

Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

US11417733B2 · kind B2 · utility

1Cited by
2References
4Claims
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Key dates

Filing dateJul 19, 2018
Grant dateAug 16, 2022
Priority date
Expiry dateJun 17, 2039

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p+-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer;

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.