Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer
US11417733B2 · kind B2 · utility
1Cited by
2References
4Claims
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Key dates
| Filing date | Jul 19, 2018 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Jun 17, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p+-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer;
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.