Contacts for semiconductor devices and methods of forming the same
US11417739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2021 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Jan 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming contacts to source/drain regions and gate electrodes in low- and high-voltage devices and devices formed by the same are disclosed. In an embodiment a device includes a first channel region in a substrate adjacent a first source/drain region; a first gate over the first channel region; a second channel region in the substrate adjacent a second source/drain region, a top surface of the second channel region being below a top surface of the first channel region; a second gate over the second channel region; an ILD over the first gate and the second gate; a first contact extending through the ILD and coupled to the first source/drain region; and a second contact extending through the ILD, coupled to the second source/drain region, and having a width greater a width of the first contact and a height greater than a height of the first contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.