High power transistor with interior-fed fingers
US11417746B2 · kind B2 · utility
4Cited by
35References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2019 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Apr 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor device includes a gate finger and a drain finger extending on a semiconductor structure, a gate bond pad coupled to the gate finger, and a drain bond pad coupled to the drain finger. The gate bond pad extends on the gate finger and/or the drain bond pad extends on the drain finger.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.