Wolfspeed, Inc.
🏢 View company profile →201Patents
196Active
201Granted
62Portfolio score
Filing activity: Mar 11, 2005 → Jun 26, 2024 · 1 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD954668S1 | Housing for a power module assembly | General | 18 | Active |
| USD937231S1 | Power semiconductor package | General | 9 | Active |
| USD969762S1 | Power semiconductor package | General | 8 | Active |
| USD942403S1 | Power module having pin fins | General | 6 | Active |
| US11652461B2 | Transistor level input and output harmonic terminations | Electricity | 5 | Active |
| USD969740S1 | Power module | General | 5 | Active |
| US11735538B2 | Semiconductor having a backside wafer cavity for radio frequency (RF) passive device integration and/or improved cooling and process of implementing the same | Electricity | 5 | Active |
| US11826846B2 | Laser-assisted method for parting crystalline material | Performing Operations; Transporting | 4 | Active |
| US11417746B2 | High power transistor with interior-fed fingers | Electricity | 4 | Active |
| US11219966B1 | Laser-assisted method for parting crystalline material | Performing Operations; Transporting | 4 | Active |
| USD985517S1 | Power module having pin fins | General | 4 | Active |
| US11519098B2 | Dislocation distribution for silicon carbide crystalline materials | Chemistry; Metallurgy | 3 | Active |
| US11696417B2 | High power multilayer module having low inductance and fast switching for paralleling power devices | Emerging Cross-Sectional Technologies | 3 | Active |
| USD954667S1 | Power module | General | 3 | Active |
| US11424333B2 | Drain and/or gate interconnect and finger structure | Electricity | 3 | Active |
| US11911842B2 | Laser-assisted method for parting crystalline material | Performing Operations; Transporting | 2 | Active |
| US11552597B2 | Radio frequency amplifier implementing an input baseband enhancement circuit and a process of implementing the same | Electricity | 2 | Active |
| US12070875B2 | Silicon carbide wafers with relaxed positive bow and related methods | Electricity | 2 | Active |
| US11654596B2 | Silicon carbide wafers with relaxed positive bow and related methods | Electricity | 2 | Active |
| US11361454B2 | Alignment for wafer images | Physics | 2 | Active |
| USD1036395S1 | Power module | General | 2 | Active |
| US12054850B2 | Large diameter silicon carbide wafers | Electricity | 2 | Active |
| US11476359B2 | Structures for reducing electron concentration and process for reducing electron concentration | Electricity | 1 | Active |
| US12125806B2 | Electronic device packages with internal moisture barriers | Electricity | 1 | Active |
| US12125701B2 | Large dimension silicon carbide single crystalline materials with reduced crystallographic stress | Chemistry; Metallurgy | 1 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.