Method for producing thin film transistor
US11417752B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2018 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Dec 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a method for producing a thin film transistor that has a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode and a drain electrode on a substrate. This method for producing a thin film transistor includes a step for forming the oxide semiconductor layer on the gate insulating layer by performing sputtering on a target with plasma. The step for forming the oxide semiconductor layer includes: a first film formation step in which only argon is supplied as a sputtering gas to perform sputtering; and a second film formation step in which a mixed gas of argon and oxygen is supplied as the sputtering gas to perform sputtering. A bias voltage applied to the target is a negative voltage of −1 kV or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.