Integrated circuit including transistors and a method of manufacturing the same
US11417763B2 · kind B2 · utility
2Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2019 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Nov 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes transistors respectively including channel layers in a substrate, source electrodes and drain electrodes respectively contacting both sides of the channel layers, gate electrodes on the channel layers, and ferroelectrics layers between the channel layers and the gate electrodes. Electrical characteristics of the ferroelectrics layers of at least two of the transistors are different. Accordingly, threshold voltages of the transistors are different from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.