Gallium oxide SBD terminal structure and preparation method

US11417779B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Yuanjie Lv · Shijiazhuang, CN
• Yuangang Wang · Nanhu, CN
• Xingye Zhou · Shijiazhuang, CN
• Xin Tan · Beijing, CN
• Xubo Song · Shijiazhuang, CN
• Xuefeng Zou · Guiyang, CN
• Shixiong Liang · Sichuan, CN
• Zhihong Feng · Shijiazhuang, CN

Key dates

• Filing date: Oct 13, 2020
• Grant date: Aug 16, 2022
• Expiry date: Oct 13, 2040

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The disclosure is applicable for the technical field of semiconductor devices manufacturing, and provides a gallium oxide SBD terminal structure. The gallium oxide SBD terminal structure comprises a cathode metal layer, an N+ high-concentration substrate layer, an N− low-concentration Ga2O3 epitaxial layer and an anode metal layer from bottom to top, wherein the N− low-concentration Ga2O3 epitaxial layer is within a range of certain thickness close to the anode metal layer; and a doping concentration below the anode metal layer is greater than a doping concentration on two sides of the anode metal layer. Namely, only a doping concentration of the part outside the corresponding area of the anode metal layer is changed, so that the breakdown voltage of the gallium oxide SBD terminal structure is improved under the condition of guaranteeing low on resistance.