Formulations for high selective silicon nitride etch
US11421157B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Aug 21, 2020 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Aug 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.