Photomask including fiducial mark and method of making semiconductor device using the photomask
US11422466B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2021 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Jun 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of making a semiconductor device includes forming at least one fiducial mark on a photomask outside of a pattern region of the photomask, and the at least one fiducial mark includes identifying information for the photomask. The method includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern. The method includes transferring the pattern from the photomask to a wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.