Method of forming semiconductor device including distributed write driving arrangement
US11423974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2021 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Apr 27, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1096
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of fabricating (a distributed write driving arrangement for a semiconductor memory device) includes: forming bit cells and a local write driver in a first device layer; forming a local write bit (LWB) line and a local write bit_bar (LWB_bar) line in a first metallization layer; connecting each of the bit cells correspondingly between the LWB and LWB_bar lines; connecting the local write driver to the LWB line and the LWB_bar line; forming a global write bit (GWB) line and a global write bit_bar (GWBL_bar) line in a second metallization layer; connecting the GWB line to the LWB line; connecting the GWB line and the GWBL_bar line to the corresponding LWB line and LWB_bar line; forming a global write driver in a second device layer; and connecting the global write driver to the GWB line and the GWBL_bar line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.