Patent · US Active

Method for forming a layer by cyclic epitaxy

US11424121B2 · kind B2 · utility

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21Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Vincent Mazzocchi · Grenoble, FR
Sylvain Maitrejean · Paris, FR

Key dates

Filing date	Dec 18, 2020
Grant date	Aug 23, 2022
Priority date	—
Expiry date	Dec 18, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02535
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a layer by cycled epitaxy includes at least one sequence of steps each having a first epitaxial deposition forming a first growth layer portion having a first thickness on a first monocrystalline pattern and a second growth layer portion having a second thickness on a second non-monocrystalline pattern, the second thickness being greater than the first thickness, and a second epitaxial deposition forming a first sacrificial layer portion having a third thickness on the first growth layer portion and a second sacrificial layer portion having a fourth thickness on the second growth layer portion. The first and second growth layer portions have an additional element content, greater than the additional element content present in the first and second sacrificial layer portions. The sequence also includes etching the whole of the third and fourth thicknesses and stopping before having consumed the whole of the first thickness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.