Removable structure and removal method using the structure
US11424156B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2019 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Jan 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A detachable structure comprises a carrier substrate and a silicon oxide layer positioned on the substrate at a first interface. The detachable structure is notable in that: the oxide layer has a thickness of less than 200 nm; light hydrogen and/or helium species are distributed deeply and over the entire area of the structure according to an implantation profile, a maximum concentration of which is located in the thickness of the oxide layer; the total dose of implanted light species, relative to the thickness of the oxide layer, exceeds, at least by a factor of five, the solubility limit of these light species in the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.