Semiconductor structure and manufacturing method thereof
US11424220B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2020 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Sep 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor structure includes providing a substrate including a redistribution layer (RDL) disposed over the substrate, disposing a first patterned mask over the RDL, disposing a first conductive material over the RDL exposed from the first patterned mask to form a first conductive pillar, removing the first patterned mask, disposing a second patterned mask over the RDL, disposing a second conductive material over the RDL exposed from the second patterned mask to form a second conductive pillar, removing the second patterned mask, disposing a first die over the first conductive pillar, and disposing a second die over the second conductive pillar. A height of the second conductive pillar is substantially greater than a height of the first conductive pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.