Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices
US11424349B1 · kind B1 · utility
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16Claims
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Key dates
| Filing date | Feb 17, 2021 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Feb 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/281
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A lateral bipolar junction transistor (BJT) device includes: an emitter region, a collector region, and a base region, the base region positioned between and laterally separating the emitter region and the collector region, the base region including an intrinsic base region; and a cavity formed in a semiconductor substrate and filled with an insulating material, the cavity physically separating a lower surface of the intrinsic base region from the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.