Group III-nitride silicon controlled rectifier

US11424354B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Harald Gossner · Riemerling, DE
• Peter Baumgartner · Munich, DE
• Uwe Hodel · Munich, DE
• Domagoj Siprak · Munich, DE
• Stephan Leuschner · Lübeck, DE
• Richard Geiger · Munich, DE

Key dates

• Filing date: Sep 29, 2017
• Grant date: Aug 23, 2022
• Expiry date: Apr 18, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/149

Abstract

A Group III-Nitride (III-N) device structure is provided comprising: a heterostructure having three or more layers comprising III-N material, an anode n+ region and a cathode comprising donor dopants, wherein the anode n+ region and the cathode are on the first layer of the heterostructure and wherein the anode n+ region and the cathode extend beyond the heterostructure, and an anode metal region within a recess that extends through two or more of the layers, wherein the anode metal region is in electrical contact with the first layer, wherein the anode metal region comprises a first width within the recess and a second width beyond the recess, and wherein the anode metal region is coupled with the anode n+ region. Other embodiments are also disclosed and claimed.