Semiconductor device and method for manufacturing the same
US11424360B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2021 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Feb 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/611
Abstract
A semiconductor device includes a substrate, a dielectric layer, a source region, a drain region, and a metal structure. The substrate has a trench therein, and the dielectric layer is conformally formed over the substrate and the trench. The source region and the least one drain region are in the substrate. The metal structure is filled in the trench and surrounded by the dielectric layer, and the metal structure is disposed between the source region and the drain region. Moreover, the metal structure has a first metal portion and a second metal portion which has a height greater than a height of the first metal portion, and the first metal portion is disposed between the drain region and the second metal portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.