Post treatment to reduce shunting devices for physical etching process
US11424405B2 · kind B2 · utility
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11References
20Claims
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Key dates
| Filing date | Jun 29, 2020 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Jul 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers is provided on a bottom electrode. A top electrode is provided on the MTJ stack. The top electrode is patterned. Thereafter, the MTJ stack not covered by the patterned top electrode is oxidized or nitridized. Then, the MTJ stack is patterned to form a MTJ device wherein any sidewall re-deposition formed on sidewalls of the MTJ device is non-conductive and wherein some of the dielectric layer remains on horizontal surfaces of the bottom electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.