Inventor · Fremont, CA, US

Vignesh Sundar

41Patents
4h-index
18Co-inventors
52Inventor score

Filing activity: Apr 5, 2017 → Aug 9, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9935261B1 Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputtering Electricity 12 Active
US10522746B1 Dual magnetic tunnel junction devices for magnetic random access memory (MRAM) Physics 11 Active
US10797225B2 Dual magnetic tunnel junction (DMTJ) stack design Electricity 9 Active
US10516100B2 Silicon oxynitride based encapsulation layer for magnetic tunnel junctions Electricity 6 Active
US10665773B2 Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM) Electricity 4 Active
US10297746B2 Post treatment to reduce shunting devices for physical etching process Electricity 4 Active
US11417835B2 Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) Electricity 3 Active
US10522745B2 Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions Electricity 3 Active
US10522749B2 Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage Electricity 3 Active
US11043632B2 Ion beam etching process design to minimize sidewall re-deposition Electricity 2 Active
US11430945B2 MTJ device performance by adding stress modulation layer to MTJ device structure Physics 2 Active
US10622047B2 Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer Electricity 2 Active
US10115892B2 Multilayer structure for reducing film roughness in magnetic devices Electricity 2 Active
US10797232B2 Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions Electricity 2 Active
US10784310B2 Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices Electricity 1 Active
US11444241B2 Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition Electricity 1 Active
US10950782B2 Nitride diffusion barrier structure for spintronic applications Electricity 1 Active
US11696511B2 Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions Electricity 1 Active
US10475987B1 Method for fabricating a magnetic tunneling junction (MTJ) structure Physics 1 Active
US10868237B2 Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition Electricity 1 Active
US11818961B2 Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-deposition Electricity 1 Active
US11424405B2 Post treatment to reduce shunting devices for physical etching process Electricity 0 Active
US12027191B2 Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer Electricity 0 Active
US11087810B2 Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer Electricity 0 Active
US11785864B2 MTJ device performance by adding stress modulation layer to mtj device structure Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.