Patent · US Active

Semiconductor layer stack and method for producing same

US11424596B2 · kind B2 · utility

1Cited by

3References

9Claims

0Family size

Assignees

OTTO-VON-GUERICKE-UNIVERSITAT MAGDEBURG · DE
Azur Space Solar Power GmbH · DE

Inventors

Armin Dadgar · Berlin, DE
Andre Strittmatter · Magdeburg, DE

Key dates

Filing date	Dec 28, 2020
Grant date	Aug 23, 2022
Priority date	—
Expiry date	Feb 17, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/3054
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, applying to the layer (A) and applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL−EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.