Iodine-containing compounds for etching semiconductor structures

US11430663B2 · kind B2 · utility

Assignees

• American Air Liquide, Inc. · US
• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR
• Air Liquide Electronics U.S. LP · US

Inventors

• Vijay Surla · Fremont, US
• Rahul Gupta · Santa Clara, US
• Hui SUN · Hangzhou City, CN
• Venkateswara R. Pallem · Hockessin, US
• Nathan Stafford · Happy Valley, US
• Fabrizio Marchegiani · Wilmington, US
• Vincent M. Omarjee · Grenoble, FR
• James Royer · San Diego, US

Key dates

• Filing date: Mar 3, 2020
• Grant date: Aug 30, 2022
• Expiry date: Mar 3, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/00
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.