Semiconductor device and method of manufacturing semiconductor device
US11430666B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2019 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Dec 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.