Forming crystalline source/drain contacts on semiconductor devices
US11430787B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 26, 2017 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Sep 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques for forming contacts comprising at least one crystal on source and drain (S/D) regions of semiconductor devices are described. Crystalline S/D contacts can be formed so as to conform to some or all of the top and side surfaces of the S/D regions. Crystalline S/D contacts of the present disclosure are formed by selectively depositing precursor on an exposed portion of one or more S/D regions. The precursor are then reacted in situ on the exposed portion of the S/D region. This reaction forms the conductive, crystalline S/D contact that conforms to the surface of the S/D regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.